dc.contributor.author | DONEGAN, JOHN FRANCIS | |
dc.contributor.author | HEGARTY, JOHN | |
dc.date.accessioned | 2010-02-11T11:30:29Z | |
dc.date.available | 2010-02-11T11:30:29Z | |
dc.date.issued | 1996 | |
dc.date.submitted | 1996 | en |
dc.identifier.citation | P. Rees, F. P. Logue, J. F. Donegan, J. F. Heffernan, C. Jordan, and J. Hegarty, Calculation of gain?current characteristics in ZnCdSe?ZnSe quantum well structures including many body effects., Applied Physics Letters, 67, (25), 1996, p3780 - 3782 | en |
dc.identifier.other | Y | |
dc.identifier.uri | http://hdl.handle.net/2262/37506 | |
dc.description | PUBLISHED | en |
dc.description.abstract | The gain-spontaneous recombination characteristics have been calculated for a 40 ? Zn0.8Cd0.2Se-ZnSe quantum well including many body effects. We examine the effect of the inclusion of the Coulomb enhancement on the gain spectra and the gain-current relationship. We show that, in the absence of the Coulomb enhancement, the threshold current density of a 340 ?m 40 ? Zn0.8Cd0.2Se-ZnSe quantum well laser is underestimated by approximately 40% and the lasing wavelength overestimated by 4 nm. Our calculation of the scattering lifetime for the first electron-heavy hole transition gives a lifetime varying between 29 and 37 fs, and shows that the carrier-phonon scattering mechanism in II-VI quantum wells is more dominant than in III-V materials. We also comment on the effect the neglect of Coulomb enhancement has on the calculation of leakage currents in a laser at threshold. | en |
dc.format.extent | 3780 | en |
dc.format.extent | 3782 | en |
dc.format.extent | 82906 bytes | |
dc.format.mimetype | application/pdf | |
dc.language.iso | en | en |
dc.publisher | American Institute of Physics | en |
dc.relation.ispartofseries | Applied Physics Letters | en |
dc.relation.ispartofseries | 67 | en |
dc.relation.ispartofseries | 25 | en |
dc.rights | Y | en |
dc.subject | CADMIUM SELENIDES | en |
dc.subject | CHARGE CARRIERS | en |
dc.subject | COULOMB FIELD | en |
dc.subject | ELECTRON - PHONON COUPLING | en |
dc.title | Calculation of gain?current characteristics in ZnCdSe?ZnSe quantum well structures including many body effects. | en |
dc.type | Journal Article | en |
dc.type.supercollection | scholarly_publications | en |
dc.type.supercollection | refereed_publications | en |
dc.identifier.peoplefinderurl | http://people.tcd.ie/jdonegan | |
dc.identifier.peoplefinderurl | http://people.tcd.ie/jhegarty | |
dc.identifier.rssinternalid | 4864 | |
dc.identifier.rssuri | http://dx.doi.org/10.1063/1.115381 | |