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dc.contributor.authorZHANG, HONGZHOUen
dc.date.accessioned2010-12-09T15:50:13Z
dc.date.available2010-12-09T15:50:13Z
dc.date.issued2010en
dc.date.submitted2010en
dc.identifier.citationLiao, ZM, Hou, C, Zhang, HZ, Wang, DS, Yu, DP, Evolution of resistive switching over bias duration of single Ag2S nanowires, Applied Physics Letters, 96, 2010, 203109-en
dc.identifier.otherYen
dc.identifier.urihttp://hdl.handle.net/2262/41264
dc.descriptionPUBLISHEDen
dc.description.abstractWe report experimental results of ultralow frequency photocurrent oscillation in individual ZnO nanowires. Consecutive photocurrent and photoluminescence measurements corroborate the process of capture and release of photogenerated holes by surface trap states. The dynamic process results in the oscillation of the thickness of surface depletion region, which is believed to be responsible for the observed photocurrent oscillation.en
dc.description.sponsorshipNational Science Foundation Chinaen
dc.format.extent203109en
dc.language.isoenen
dc.relation.ispartofseriesApplied Physics Lettersen
dc.relation.ispartofseries96en
dc.rightsYen
dc.subjectAgS nanowiresen
dc.subjectPhotocurrenten
dc.titleEvolution of resistive switching over bias duration of single Ag2S nanowiresen
dc.typeJournal Articleen
dc.type.supercollectionscholarly_publicationsen
dc.type.supercollectionrefereed_publicationsen
dc.identifier.peoplefinderurlhttp://people.tcd.ie/hozhangen
dc.identifier.rssinternalid69944en


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