Method to improve the noise figure and saturation power in multi-contact semiconductor optical amplifiers: simulation and experiment
Citation:
Carney, K, Lennox, R, Maldonado-Basilio, R, Philippe, S, Surre, F, Bradley, L, Landais, P, Method to improve the noise figure and saturation power in multi-contact semiconductor optical amplifiers: simulation and experiment, OPTICS EXPRESS, 21, 6, 2013, 7180-7195Download Item:
Abstract:
The consequences of tailoring the longitudinal carrier density along the active layer of a multi-contact bulk semiconductor optical amplifier (SOA) are investigated using a rate equation model. It is shown that both the noise figure and output power saturation can be optimized for a fixed total injected bias current. The simulation results are validated by comparison with experiment using a multi-contact SOA. The inter-contact resistance is increased using a focused ion beam in order to optimize the carrier density control. A chip noise figure of 3.8 dB and a saturation output power of 9 dBm are measured experimentally for a total bias current of 150 mA.
Author's Homepage:
http://people.tcd.ie/bradlelDescription:
PUBLISHED
Author: Bradley, Louise
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Journal ArticleCollections
Series/Report no:
OPTICS EXPRESS21
6
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Full text availableDOI:
http://dx.doi.org/10.1364/OE.21.007180ISSN:
1094-4087Metadata
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