Influence of the buffer layer properties on the intensity of Raman scattering of graphene
Citation:
S. Dyakov, T. Perova, C. Miao, Ya-Hong Xie, S. Cherevkov, A. Baranov , Influence of the buffer layer properties on the intensity of Raman scattering of graphene, Journal of Raman Spectroscopy, 44, 6, 2013, 803 - 809Abstract:
Using a model of oscillating dipoles, we simulate the intensity of the G-band in the Raman signal from structures consisting of
graphene, separated by an arbitrary buffer layer from a substrate. It is found that a structure with an optimized buffer layer
refractive index and thickness exhibits a Raman signal which is nearly 50 times more intense than that from the same structure
with a non-optimized buffer layer. The theoretical simulations are verified by Raman measurements on structures consisting
of a layer of graphene on SiO2 and Al2O3 buffer layers. The optical contrast of the single graphene layer is calculated for an
arbitrary buffer layer. It was found that both the Raman intensity and optical contrast can be maximized by varying the buffer layer thickness.
Author's Homepage:
http://people.tcd.ie/perovatDescription:
PUBLISHED
Author: PEROVA, TATIANA
Type of material:
Journal ArticleSeries/Report no:
Journal of Raman Spectroscopy;44;
6;
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