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dc.contributor.authorRODE, KARSTENen
dc.contributor.authorCOEY, JOHNen
dc.contributor.authorSTAMENOV, PLAMENen
dc.contributor.authorBORISOV, KIRILen
dc.contributor.authorLAU, YONGen
dc.contributor.authorBETTO, DAVIDEen
dc.date.accessioned2015-03-27T13:14:45Z
dc.date.available2015-03-27T13:14:45Z
dc.date.issued2015en
dc.date.submitted2015en
dc.identifier.citationNaganivetha Thiyagarajah, Yong-Chang Lau, Davide Betto, Kiril Borisov, J. M. D. Coey, Plamen Stamenov and Karsten Rode, Giant spontaneous Hall effect in zero-moment Mn2Ru x Ga, Applied Physics Letters, 106, 2015, 122402 -en
dc.identifier.otherYen
dc.identifier.urihttp://hdl.handle.net/2262/73644
dc.descriptionPUBLISHEDen
dc.description.abstractSpin-dependent transport properties of Mn2Ru x Ga thin-films are studied as function of the Ru concentration and the substrate-induced strain. The large spontaneous Hall angle of 7.7% twenty times bigger than in other 3d metals is a signature of its half-metallicity. The compensation temperature where the magnetization of the two inequivalent antiferromagnetically coupled Mn sublattices cancel can be tuned by varying x or the biaxial strain. This zero-moment half metal is free from demagnetizing forces and creates no stray field, effectively removing two obstacles to integrating magnetic elements in densely packed, nanometer-scale memory elements, and millimeter-wave generators.en
dc.description.sponsorshipThis work was supported by Science Foundation Ireland through AMBER, and from the Grant Nos. 13/ERC/I2561 and 11/SIRG/I2130. K.R. acknowledges financial support from the European Community's Seventh Framework Programme IFOX, NMP3-LA-2010-246102. D.B. acknowledges financial support from IRCSET. The authors would like to thank H. Kurt, M. Žic, and T. Archer for fruitful discussions.en
dc.format.extent122402en
dc.language.isoenen
dc.relation.ispartofseriesApplied Physics Lettersen
dc.relation.ispartofseries106en
dc.rightsYen
dc.subjectMn2Ru x Ga thin-filmsen
dc.subject.lcshMn2Ru x Ga thin-filmsen
dc.titleGiant spontaneous Hall effect in zero-moment Mn2Ru x Gaen
dc.typeJournal Articleen
dc.type.supercollectionscholarly_publicationsen
dc.type.supercollectionrefereed_publicationsen
dc.identifier.peoplefinderurlhttp://people.tcd.ie/rodeken
dc.identifier.peoplefinderurlhttp://people.tcd.ie/stamenpen
dc.identifier.peoplefinderurlhttp://people.tcd.ie/dbettoen
dc.identifier.peoplefinderurlhttp://people.tcd.ie/jcoeyen
dc.identifier.rssinternalid102168en
dc.identifier.doihttp://dx.doi.org/10.1063/1.4913687en
dc.rights.ecaccessrightsopenAccess
dc.contributor.sponsorScience Foundation Ireland (SFI)en
dc.contributor.sponsorGrantNumber13/ERC/I2561en
dc.contributor.sponsorScience Foundation Ireland (SFI)en
dc.contributor.sponsorGrantNumber11/SIRG/I2130.en


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