| dc.contributor.author | Bradley, Louise | |
| dc.contributor.author | Donegan, John | |
| dc.contributor.author | Lunney, James | |
| dc.date.accessioned | 2020-07-28T21:23:21Z | |
| dc.date.available | 2020-07-28T21:23:21Z | |
| dc.date.issued | 2002 | |
| dc.date.submitted | 2002 | en |
| dc.identifier.citation | A. Shaw, T. McCormack, A.L. Bradley, J.G. Lunney, J.F. Donegan, Modelling of Extraction Efficiency of GaN-Based Resonant Cavity Light Emitting Diodes Emitting at 510 nm, Physica Status Solidi (a), 2002, 192, 1, 103 - 109 | en |
| dc.identifier.other | Y | |
| dc.identifier.uri | http://hdl.handle.net/2262/93070 | |
| dc.description | PUBLISHED | en |
| dc.description.abstract | The design of GaN resonant cavity light emitting diodes (RCLEDs) emitting at 510 nm is optimised for maximum extraction efficiency into numerical apertures (NAs) of 1.0 and 0.5. The optimisation is performed as a function of the Al fraction in the AlGaN/GaN distributed Bragg reflector (DBR) cavity mirror and of the InGaN/GaN quantum well (QW) emission linewidth. The calculated enhancement factors of the extraction efficiency compared to a bulk LED for emission into a NA of 1.0 (0.5) increase from 3.0 (3.4) for a single metal mirror LED structure to 4.2 (5.8) for a metal–AlN/GaN DBR RCLED structure. The dependence of efficiency and optimum number of DBR pairs on Al fraction in the DBR, QW emission linewidth, and emission NA is discussed in terms of cavity modal properties. | en |
| dc.format.extent | 103 | en |
| dc.format.extent | 109 | en |
| dc.format.extent | <a title= 'Click on this link to see the details for this article.' href='http://tcdlocalportal.tcd.ie/pls/webapps/cerif.cerif_publications_isi.show_article?p_article_id=125906593 '>ISI article no: 125906593</a> | en |
| dc.format.medium | ISI_125906593 | en |
| dc.language.iso | en | en |
| dc.relation.ispartofseries | Physica Status Solidi (a); | |
| dc.relation.ispartofseries | 192; | |
| dc.relation.ispartofseries | 1; | |
| dc.rights | Y | en |
| dc.title | Modelling of Extraction Efficiency of GaN-Based Resonant Cavity Light Emitting Diodes Emitting at 510 nm | en |
| dc.type | Journal Article | en |
| dc.type.supercollection | scholarly_publications | en |
| dc.type.supercollection | refereed_publications | en |
| dc.identifier.peoplefinderurl | http://people.tcd.ie/bradlel | |
| dc.identifier.peoplefinderurl | http://people.tcd.ie/jlunney | |
| dc.identifier.peoplefinderurl | http://people.tcd.ie/jdonegan | |
| dc.identifier.rssinternalid | 35431 | |
| dc.identifier.doi | http://dx.doi.org/10.1002/1521-396X(200207)192:1<103::AID-PSSA103>3.0.CO;2-F | |
| dc.rights.ecaccessrights | openAccess | |
| dc.identifier.orcid_id | 0000-0002-9399-8628 | |
