Novel system development for combined scanning tunneling microscopy & surface stress measurements to investigate the origins of surface forces

Abstract

The oxidation of the silicon surface has been widely studied due to its vast scientific and technological importance. However, despite extensive work on the topic the exact details of the oxidation reaction still remain a contentious issue. It has been proposed that surface stress measurements may prove useful in elucidating this and related issues. In the case of adsorption on solid-state surfaces, induced surface stresses arise primarily from differences in atomic size and electronegativity, in addition to changes in surface morphology and defect formation.